ROOM TEMPERATURE FERROMAGNETIC SEMICONDUCTOR GROWN BY PLASMA ENHANCED MOLECULAR BEAM EPITAXY AND FERROMAGNETIC SEMICONDUCTOR BASED DEVICE

摘要

A 3 group - 5 group compound ferromagnetic semiconductor, comprising one material 'A' selected from the group of Ga, Al and In and one material 'B' selected from the group consisting of N and P, wherein one material 'C' selected from the group consisting of Mn, Mg, Co, Fe, Ni, Cr and V is doped as a material for substituting the material 'A', the compound semiconductor has a single phase as a whole. The ferromagnetic semiconductor can be fabricated by a plasma-enhance molecular beam epitaxy growing method and since it shows the ferromagnetic characteristics at a room temperature, it can be applied as various spin electron devices.