| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor of a new constitution which is higher in a working current and larger in an ON/OFF ratio. SOLUTION: The field effect transistor includes at least a support substrate 1, a source electrode 5, a drain electrode 6, a semiconductor layer 7, an insulating layer 3, and a gate electrode 2; and uses an organic material as the semiconductor layer. The source electrode 5 and the drain electrode 6 are formed in an identical plane, widths between the source electrode and the drain electrode at portions electrically connected through the semiconductor layer 7 are at least different in a film thickness direction of the semiconductor layer 7, and the gate electrode 2 is provided at a short side of the width (a) between the source electrode and the drain electrode. COPYRIGHT: (C)2005,JPO&NCIPI
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