发明名称 TEMPERATURE AND PROCESS COMPENSATION OF MOSFET OPERATING IN SUB-THRESHOLD MODE
摘要 Compensation for variations in temperature and manufacturing process of a MOSFET operating in its sub-threshold mode. The compensation may include circuitry containing at least a second MOSFET that may also operate in its sub-threshold mode. The operational characteristics of the second MOSFET may be closely matched to those of the first MOSFET, and the second MOSFET may be contained on the same substrate.
申请公布号 WO2004107566(A3) 申请公布日期 2005.06.02
申请号 WO2004US16119 申请日期 2004.05.20
申请人 QUALCOMM, INCORPORATED;ZHOU, JIANJUN;ZHANG, XUEJUN 发明人 ZHOU, JIANJUN;ZHANG, XUEJUN
分类号 H03F1/30;H03G1/04 主分类号 H03F1/30
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