| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of dividing silicon wafer for surely dividing a silicon wafer, without thermal influencing the wafer. <P>SOLUTION: The silicon wafer dividing method for dividing a silicon wafer 10 along a predetermined dividing line comprises a reformed layer forming process, to form a reformed layer 110 exposed to the plane 10b irradiated at least with a laser beam from the inside of the silicon wafer 10 through irradiation of the pulse laser beam with the wavelength having transmissivity with respect to the silicon wafer 10 along the dividing line; and a dividing process for dividing the silicon wafer along the predetermined dividing line, by making thermal stress generated along the dividing line through irradiation of the laser beam having the absorbance properties with respect to the silicon wafer 10 from the side, where the reformed layer 110 is exposed along the predetermined dividing line on which the reformed layer 110 is formed. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
