| 摘要 |
<P>PROBLEM TO BE SOLVED: To materialize a drive unit and a power converter for a switching device, which hardly causes malfunction in the switching device even if a reverse recovery current flows to a parasitic diode between the body and the drain of a field effect transistor for level shift and voltage drop occurs in a level shift resistor. <P>SOLUTION: In the power converter 100 which mounts a high-potential-side switching device drive HD and its drive, body resistors are inserted between the bodies of HNMOS transistors 2 and 3 and grounding potential COM. Herewith, the voltage between the grounding potential COM and the positive potential output VB1 can be divided with level shift resistors 4 and 5, respectively. Hereby, even in case that reverse recovery currents flow to the parasitic diode between the bodies and the drains of the HNMOS transistors 2 and 3 and voltage drop occurs between the level shift resistors 4 and 5, it is possible to suppress the voltage ripple at the input ends of inverters 6 and 7, and malfunction hardly occurs. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
