发明名称 |
Semiconductor device and fabrication method thereof |
摘要 |
A hydrogenation method that utilizes plasma directly exposes a crystalline semiconductor film to the plasma, and therefore involves the problem that the crystalline semiconductor film is damaged by the ions generated simultaneously in the plasma. If a substrate is heated to 400° C. or above to recover this damage, hydrogen is re-emitted from the crystalline semiconductor film. To solve these problems, a method of fabricating a semiconductor device according to the present invention comprises the steps of forming a hydrogen-containing first insulating film on a semiconductor layer formed into a predetermined shape, conducting heat-treatment in a hydrogen atmosphere or in an atmosphere containing hydrogen formed by plasma generation, forming a second insulating film in contact with the first insulating film, conducting heat-treatment in a hydrogen atmosphere or in an atmosphere containing hydrogen formed by plasma generation, forming a hydrogen-containing third insulating film on the second insulating film and conducting heat-treatment in an atmosphere containing hydrogen or nitrogen.
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申请公布号 |
US2005118751(A1) |
申请公布日期 |
2005.06.02 |
申请号 |
US20040023159 |
申请日期 |
2004.12.27 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;ASAMI TAKETOMI;KITAKADO HIDEHITO;ARAI YASUYUKI |
分类号 |
H01L21/30;H01L21/314;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/423;H01L29/49;H01L29/786;(IPC1-7):H01L21/00;H01L21/26;H01L21/324;H01L21/42;H01L21/477 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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地址 |
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