WRITE DRIVER CIRCUIT IN PHASE CHANGE MEMORY DEVICE AND METHOD FOR APPLYING WRITE CURRENT

摘要

A write driver circuit including a plurality of programmable fuses for a phase change memory device in which a write operation is correctly performed even in the case where a current output shift in a write current generation circuit; or in the case where a phase change memory cell has a phase change property shift due to an external factor or due a process change. The write driver circuit includes; a write current control unit for outputting a first or second level of voltage selected, by selecting one of a first or second programmable current path, based on whether a first or second selection pulse signal is applied; and a current driving unit for generating a write current controlled by the output voltage of the write current control unit. Each of the first and second programmable current paths includes fuses that can be programmed to adjusted their resistance to adjust the respective selected output voltage to compensate for a current output shift in a write current generation circuit or for a phase change memory cell has a phase change property shift.