Method for controlling an Isolated-Gate Bipolar Transistor and device for carrying out the method

摘要

A control process for an insulated gate bipolar transistor (IGBT) comprises monitoring (2) the collector (6)-to-emitter (7) voltage on switch-off, especially on discharge of the gate capacity and, on receipt of an instruction, effecting the switch-off through one of two units (1) having different discharge characteristics. An independent claim is also included for a device for the above process.