发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 Electrically conductive layers 1a and 2a connected to each other via a contact form one inductor, while electrically conductive layers 1b and 2b connected to each other via other contact form the other inductor. Since the areas defined by the loops forming these two inductors are equal to each other, the inductances of the inductors are also equal to each other. Between both the inductors, the lengths in the loop of the portions (the conductive layers 1a and 1b) formed on a lower interlayer insulating film are equal to each other, while the lengths in the loop of the portions (the conductive layers 2a and 2b) formed on an upper interlayer insulating film are also equal to each other. This allows external disturbances such as parasitic capacitance to affect both the inductors equally. Accordingly, a voltage controlled oscillator incorporating the invention can stably provide undistorted sinusoidal oscillation signals.
申请公布号 KR100492342(B1) 申请公布日期 2005.05.30
申请号 KR20030005552 申请日期 2003.01.28
申请人 发明人
分类号 H01L27/02;(IPC1-7):H01L27/02 主分类号 H01L27/02
代理机构 代理人
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