发明名称 SELECTIVE ETCH AND CLEANING CHEMISTRIES, METHODS OF PRODUCTION AND USES THEREOF
摘要 <p>An etching and/or cleaning solution includes: a) at least one fluorine-based salt constituent, b) a non-polar solvent constituent in an aqueous environment, wherein the solution constituents are at a suitable concentration to etch polymer-based residues from a surface without reacting with metals, metal-based compositions and silicon-based compositions. Another contemplated etching solution comprises a) at least one fluorine-based salt constituent, b) a compatible solvent constituent in an non-aqueous environment, wherein the solution constituents are at a suitable concentration to etch polymer-based residues from a surface without reacting with metals, metal-based compositions and silicon-based compositions. A method of forming an etching and/or cleaning solution includes: a) providing at least one fluorine-based salt constituent; b) providing a non-polar solvent constituent; c) blending the fluorine-based salt constituent and the non-polar solvent constituent in an aqueous environment to form a solution, wherein the solution constituents are at a suitable concentration to etch polymer-based residues from a surface without reacting with metals, metal-based compositions and silicon-based compositions. Another contemplated method of forming an etching solution comprises a) providing at least one fluorine-based salt constituent; b) providing a compatible solvent constituent; c) blending the fluorine-based salt constituent and the compatible solvent constituent in an non-aqueous environment to form a solution, wherein the solution constituents are at a suitable concentration to etch polymer-based residues from a surface without reacting with metals, metal-based compositions and silicon-based compositions.</p>
申请公布号 WO2005047422(A1) 申请公布日期 2005.05.26
申请号 WO2004US35516 申请日期 2004.11.10
申请人 HONEYWELL INTERNATIONAL INC.;STARZYNSKI, JOHN 发明人 STARZYNSKI, JOHN
分类号 C09K13/08;C09K13/00;(IPC1-7):C09K13/00 主分类号 C09K13/08
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