| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device which can obtain stable device characteristics, ensures higher manufacturing yield, and includes a process for bonding a GaP wafer of the first conductive type to a semiconductor layer of the first conductivity type, and to provide a method of manufacturing a GaP wafer for the purpose cited. <P>SOLUTION: A GaP buffer layer is formed, without the use of an impurity raw material of the first conductive type on the GaP substrate of the first conductive type through the MOCVD method, and a wafer is manufactured by doping the impurity of the first conductivity type to this GaP buffer layer through ion implantation method or solid-phase diffusing method. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
