发明名称 System architecture of semiconductor manufacturing equipment
摘要 A semiconductor manufacturing equipment wherein degas chamber(s) are integrated to the conventional pass-through chamber location. A preferred embodiment for depositing Cu barrier and seed layers on a semiconductor wafer comprises a front opening unified pod(s), a single wafer loadlock chamber(s), a degas chamber(s), a preclean chamber(s), a Ta or TaN process chamber(s), and a Cu process chamber(s). The degas chamber is integrated to a pass-through chamber. Such system may achieve system throughput higher than 100 wafers per hour.
申请公布号 US6897146(B2) 申请公布日期 2005.05.24
申请号 US20030602225 申请日期 2003.06.23
申请人 APPLIED MATERIALS, INC. 发明人 MORAD RATSON;SHIN HO SEON
分类号 C23C16/02;C23C16/54;H01L21/00;(IPC1-7):H01L21/476 主分类号 C23C16/02
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