发明名称 THIN FILM TRANSISTOR ARRAY PANEL
摘要 The present invention provides a thin film transistor array panel comprising: an insulating substrate; a first signal line formed on the insulating substrate and extending in a first direction; a second signal line formed on the insulating substrate, extending in a second direction, and intersecting the first signal line; a thin film transistor connected to the first and second signal lines; a passivation layer formed on the second signal line and having a contact hole exposing a portion of the second signal line; and a pixel electrode formed on the passivation layer and connected to the thin film transistor through the contact hole, wherein the passivation layer is formed by coating an organic solution that includes an organic insulating material and a solvent including at least one of PGMEP, EEP, and nBA.
申请公布号 KR20050047755(A) 申请公布日期 2005.05.23
申请号 KR20030081538 申请日期 2003.11.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JEONG, SOO IM;JU, JIN HO;LEE, YOU KYOUNG
分类号 G02F1/136;G02F1/1362;H01L21/77;H01L21/84;H01L27/12;(IPC1-7):G02F1/136 主分类号 G02F1/136
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