| 摘要 |
PROBLEM TO BE SOLVED: To inhibit a short circuit between patterns even when the miniaturization of the patterns of a titanium silicide film progresses. SOLUTION: An element isolation oxide film 19 and a gate electrode 14 are formed to a silicon substrate 10. A side wall material 16 is formed on the side wall of the gate electrode 14, and an impurity layer 18 is formed on the substrate 10. Titanium films 11 are formed so as to coat the oxide film 19, the gate electrode 14, the side wall material 16 and the layer 18. The titanium silicide film 13 having a C49 phase is formed by a heat treatment. Oxide layers 20 are formed to sections superposed to each of the oxide film 19 and the side wall material 16 in the surfaces of the titanium films 11. The film 13 is phase-changed from the C49 phase to a C54 phase by the heat treatment at a high temperature together with the film 13 having the C49 phase and the films 11. The films 11 are reacted with the oxide layers 20, and changed into titanium oxide films 22. The films 22 and the layers 20 are removed. COPYRIGHT: (C)2005,JPO&NCIPI
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