Independently accessed double-gate and tri-gate transistors in same process flow

摘要

An independent access, double-gate transistor and tri-gate transistor fabricated in the same process flow is described. An insulative plug is removed from above the semiconductor body of the I-gate device, but not the tri-gate device. This allows, for instance, metalization to form on three sides of the tri-gate device, and allowing independent gates for the I-gate device.