发明名称 |
METHOD OF FORMING BARRIER LAYER |
摘要 |
First, a substrate having at least a conducting layer is provided. Then, a CVD process is performed to form the Ti/TiN barrier layer onto the conducting layer. An examination procedure is followed, and if particles are detected in the Ti/TiN barrier layer, then a rework procedure is performed to remove the Ti/TiN barrier layer and to reform a new Ti/TiN barrier layer.
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申请公布号 |
US2005103750(A1) |
申请公布日期 |
2005.05.19 |
申请号 |
US20040709552 |
申请日期 |
2004.05.13 |
申请人 |
CHEN CHING-HUA;CHENG YI-CHUNG |
发明人 |
CHEN CHING-HUA;CHENG YI-CHUNG |
分类号 |
C23F1/26;C23G1/10;H01L21/66;H01L21/768;(IPC1-7):B65D1/00;F16L1/00;B32B1/08;B29D23/00;B29D22/00;C23F1/00;B44C1/22;C03C15/00;C03C25/68 |
主分类号 |
C23F1/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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