发明名称 |
ELECTRON BEAM IRRADIATION DEVICE, IRRADIATION METHOD, AND ELECTRON BEAM LITHOGRAPHY SYSTEM |
摘要 |
PROBLEM TO BE SOLVED: To provide an electron beam irradiation device and its method capable of inexpensive and high-throughput irradiation of a heavy current to a large irradiation area, and to provide an inexpensive and high-throughput electron beam lithography system and its method having a maintenance-free system and reduced running cost, and capable of high-resolution drawing compared with hitherto. SOLUTION: An electron emission source 1 has an array formed by a plurality of micro-emitter type electron guns 1a, and a transmission part 16a of an electron flux of an electron beam taking-out window 16 has array arrangement corresponding to the array by the micro-emitter type electron guns 1a by a prescribed relation. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005127800(A) |
申请公布日期 |
2005.05.19 |
申请号 |
JP20030362338 |
申请日期 |
2003.10.22 |
申请人 |
TOSHIBA CORP |
发明人 |
KINOSHITA HIDETOSHI;HASHIMOTO SUSUMU;AKAMA YOSHIAKI |
分类号 |
G21K5/04;G03F7/20;G21K5/00;H01J37/073;H01J37/305;H01L21/027;(IPC1-7):G21K5/04 |
主分类号 |
G21K5/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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