发明名称 ELECTRON BEAM IRRADIATION DEVICE, IRRADIATION METHOD, AND ELECTRON BEAM LITHOGRAPHY SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide an electron beam irradiation device and its method capable of inexpensive and high-throughput irradiation of a heavy current to a large irradiation area, and to provide an inexpensive and high-throughput electron beam lithography system and its method having a maintenance-free system and reduced running cost, and capable of high-resolution drawing compared with hitherto. SOLUTION: An electron emission source 1 has an array formed by a plurality of micro-emitter type electron guns 1a, and a transmission part 16a of an electron flux of an electron beam taking-out window 16 has array arrangement corresponding to the array by the micro-emitter type electron guns 1a by a prescribed relation. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005127800(A) 申请公布日期 2005.05.19
申请号 JP20030362338 申请日期 2003.10.22
申请人 TOSHIBA CORP 发明人 KINOSHITA HIDETOSHI;HASHIMOTO SUSUMU;AKAMA YOSHIAKI
分类号 G21K5/04;G03F7/20;G21K5/00;H01J37/073;H01J37/305;H01L21/027;(IPC1-7):G21K5/04 主分类号 G21K5/04
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