METHOD OF ADJUSTING ELECTRIC POTENTIAL OF WAFER AND MASK IN CHARGED-PARTICLE BEAM EXPOSURE, WAFER, AND CHARGED-PARTICLE BEAM EXPOSURE APPARATUS

摘要

PROBLEM TO BE SOLVED: To avoid influence to the mask and the electron-beam orbit in electron-beam exposure by canceling the electrostatic charge of the wafer, which is caused by implanting electrons with charges into the resist layer by irradiation of an electron beam. SOLUTION: The surface of the wafer 40 is coated with an electrically conductive film 44, which serves as an equipotential-surface forming means. The electron-beam exposure apparatus 10 is furnished with a surface-potential measuring means 91, 93 for measuring the potential to the ground of the electrically conductive film 44 on the wafer surface and a voltage applying means 94, 95 for applying a voltage that cancels the potential to the ground of the equipotential forming means 44 to the wafer based on the measured potential. COPYRIGHT: (C)2005,JPO&NCIPI