发明名称 IMAGE SENSOR WITH DEEP WELL REGION AND METHOD OF FABRICATING THE IMAGE SENSOR
摘要 An imager, an image sensor (10) included in the imager and a method of fabricating the image sensor (10) are provided. The image sensor (10) having a substrate (20) with front and back sides to produce image data, includes a transparent conductive coating (170) arranged on the back side of the substrate (20), a first well region (30) of a first conductive type having first and second opposite sides, the first side being arranged adjacent with the front side of the image sensor (10); and a second well region (70) of a second conductive type, different from the first conductive type and having a deep well region (60) provided adjacent with the second side of the first well region (30), the transparent conductive coating (170) configured to develop or to receive a first potential and the first well region (30) configured to receive a second potential to substantially deplete a region between the transparent conductive coating (170) and the first well region (30).
申请公布号 WO2005046207(A2) 申请公布日期 2005.05.19
申请号 WO2004US36655 申请日期 2004.11.04
申请人 SARNOFF CORPORATION;JANESICK, JAMES, ROBERT;DINES, EUGENE, L;MUZILLA, MARK, S;STAPELBROEK, MARYN, G 发明人 JANESICK, JAMES, ROBERT;DINES, EUGENE, L;MUZILLA, MARK, S;STAPELBROEK, MARYN, G
分类号 H01L21/00;H01L21/8238;H01L27/108;H01L27/146;H01L29/04;H01L29/12;H01L29/76;H01L31/00;H01L31/036;H01L31/112;H04N;(IPC1-7):H04N/ 主分类号 H01L21/00
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