发明名称 |
Method of manufacturing an electronic device and a semiconductor integrated circuit device |
摘要 |
A method of manufacturing an electronic device, such as a high-speed semiconductor integrated circuit device, provides improved dimensional accuracy in transferring fine patterns. Photolithography for gate patterns and wiring patterns is carried out by exposing a halftone phase-shift mask having shade areas made of resist with an oblique illumination system, and photolithography for contact hole patterns is carried out by using a photomask having a metal shade film with metal alignment wafer marks. |
申请公布号 |
US6893785(B2) |
申请公布日期 |
2005.05.17 |
申请号 |
US20030684391 |
申请日期 |
2003.10.15 |
申请人 |
HITACHI, LTD. |
发明人 |
TANAKA TOSHIHIKO;HASEGAWA NORIO |
分类号 |
G03F1/08;G03F1/00;G03F1/32;G03F1/68;G03F7/20;G03F9/00;H01L21/027;(IPC1-7):G03F9/00;G03C5/00 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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