发明名称 Method of manufacturing an electronic device and a semiconductor integrated circuit device
摘要 A method of manufacturing an electronic device, such as a high-speed semiconductor integrated circuit device, provides improved dimensional accuracy in transferring fine patterns. Photolithography for gate patterns and wiring patterns is carried out by exposing a halftone phase-shift mask having shade areas made of resist with an oblique illumination system, and photolithography for contact hole patterns is carried out by using a photomask having a metal shade film with metal alignment wafer marks.
申请公布号 US6893785(B2) 申请公布日期 2005.05.17
申请号 US20030684391 申请日期 2003.10.15
申请人 HITACHI, LTD. 发明人 TANAKA TOSHIHIKO;HASEGAWA NORIO
分类号 G03F1/08;G03F1/00;G03F1/32;G03F1/68;G03F7/20;G03F9/00;H01L21/027;(IPC1-7):G03F9/00;G03C5/00 主分类号 G03F1/08
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