发明名称 |
THIN FILM TRANSISTOR SUBSTRATE OF HORIZONTAL ELECTRONIC FIELD APPLYING TYPE AND FABRICATING METHOD THEREOF |
摘要 |
A thin film transistor substrate structure of a horizontal electric field type LCD comprises a plurality of signal lines including a gate, a data, and a common lines disposed on a substrate; the data line intersecting with the gate and common lines, a gate insulating film disposed between the data line and the gate and common lines, a pixel area being defined by the intersection of the data and gate lines; a thin film transistor disposed at the intersection of the data line and gate line; a common and a pixel electrodes both having a portion extended into the pixel area; a protective film disposed over the substrate and the thin film transistor; and at least one pad structure including an upper pad electrode contacting a lower pad electrode within a first contact hole wherein the upper pad electrode is absent from the upper surface of the protective film. |
申请公布号 |
KR20050042988(A) |
申请公布日期 |
2005.05.11 |
申请号 |
KR20030077656 |
申请日期 |
2003.11.04 |
申请人 |
LG.PHILIPS LCD CO., LTD. |
发明人 |
CHANG, YOUN GYOUNG;CHO, HEUNG LYUL;YOO, SUNG SOON |
分类号 |
G02F1/1368;G02F1/1343;G02F1/1362;G09F9/30;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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