发明名称 |
Electronic device and method for manufacturing the same |
摘要 |
An Al film is formed on a cap wafer and the Al film is patterned into a ring-shaped film. Dry etching is performed by using the ring-shaped film as a mask to form a drum portion enclosing a recess portion to provide a vacuum dome. After forming a depth of cut into the substrate portion of the cap wafer, the cap wafer is placed on a main body wafer having an infrared area sensor formed thereon. Then, the ring-shaped film of the cap wafer and the ring-shaped film of the main body wafer are joined to each other by pressure bonding to form a ring-shaped joining portion.
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申请公布号 |
US6890834(B2) |
申请公布日期 |
2005.05.10 |
申请号 |
US20020163691 |
申请日期 |
2002.06.06 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KOMOBUCHI HIROYOSHI;KUBO MINORU;HASHIMOTO MASAHIKO;OKAJIMA MICHIO;YAMAMOTO SHINICHI |
分类号 |
H01L25/00;B81B7/00;G01J5/10;H01L23/10;H01L27/146;H01L31/0203;(IPC1-7):H01L21/30 |
主分类号 |
H01L25/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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