发明名称 Electrostatic discharge protection networks for triple well semiconductor devices
摘要 An electrostatic discharge protection network that uses triple well semiconductor devices either singularly or in a series configuration. The semiconductor devices are preferably in diode junction type configuration. A control network can be used to control the biasing when the semiconductor devices are used in a series configuration.
申请公布号 US6891207(B2) 申请公布日期 2005.05.10
申请号 US20030248329 申请日期 2003.01.09
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 PEQUIGNOT JAMES P.;SLOAN JEFFREY H.;STOUT DOUGLAS W.;VOLDMAN STEVEN H.
分类号 H01L21/761;H01L21/822;H01L21/8238;H01L27/02;H01L27/04;H01L27/06;H01L27/08;H01L27/092;(IPC1-7):H01L29/74;H01L23/62 主分类号 H01L21/761
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