发明名称 Flash/dynamic random access memory field programmable gate array
摘要 A circuit for selectively interconnecting two nodes in an integrated circuit device includes a memory array having a plurality of wordlines and a plurality of bitlines. A refresh transistor has a source coupled to one of the plurality of bitlines, a control gate coupled to a dynamic random access memory wordline and a drain. A switching transistor has a gate coupled to the drain of the refresh transistor, a source coupled to a first one of the nodes and a drain coupled to a second one of the nodes. An address decoder for supplies periodic signals to the wordlines and the dynamic random access memory wordline.
申请公布号 US6891769(B2) 申请公布日期 2005.05.10
申请号 US20030623111 申请日期 2003.07.17
申请人 ACTEL CORPORATION 发明人 MCCOLLUM JOHN;BELLIPPADY VIDYA;BAKKER GREGORY
分类号 G11C11/406;(IPC1-7):G11C7/00 主分类号 G11C11/406
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