发明名称 Low noise gain-controlled amplifier
摘要 In a gain-controlled amplifier, first, second and third transistors are provided, and a signal at one of input and output terminals is compared with a threshold voltage. When the compared signal is lower than the threshold, the second and third transistors are respectively turned into conducting and non-conducting states, and when the compared signal is higher than the threshold, the situation is in reverse. When the third transistor is non-conducting, the first and second transistors are configured to form a cascode amplifier between the input and output terminals to produce a low-noise, high-gain output signal. When the second transistor is non-conducting, the first and third transistors are configured so that the third transistor forms a base-grounded amplifier between the input and output terminals and the first transistor forms a diode for supplying a DC bias current to the third transistor to produce a low-distortion, low-gain output signal. <IMAGE>
申请公布号 EP1365504(A3) 申请公布日期 2005.05.04
申请号 EP20030011640 申请日期 2003.05.22
申请人 NEC COMPOUND SEMICONDUCTOR DEVICES, LTD. 发明人 NAKAMURA, YOSHIAKI;WANG, JIANQUIN
分类号 H03F3/45;H03G1/00;H03G3/10;H03G3/30 主分类号 H03F3/45
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