发明名称 |
Maskless micro-ion-beam reduction lithography system |
摘要 |
A maskless micro-ion-beam reduction lithography system is a system for projecting patterns onto a resist layer on a wafer with feature size down to below 100 nm. The MMRL system operates without a stencil mask. The patterns are generated by switching beamlets on and off from a two electrode blanking system or pattern generator. The pattern generator controllably extracts the beamlet pattern from an ion source and is followed by a beam reduction and acceleration column.
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申请公布号 |
US6888146(B1) |
申请公布日期 |
2005.05.03 |
申请号 |
US19990289332 |
申请日期 |
1999.04.09 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
LEUNG KA-NGO;BARLETTA WILLIAM A.;PATTERSON DAVID O.;GOUGH RICHARD A. |
分类号 |
H01J3/18;(IPC1-7):H01J3/18 |
主分类号 |
H01J3/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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