Lateral DMOS transistor having reduced surface field

摘要

In accordance with the present invention, a metal oxide semiconductor (MOS) transistor has a substrate of a first conductivity type. A drift region of a second conductivity type is formed over the substrate. A body region of the first conductivity type is formed in the drift region. A source region of the second conductivity is formed in the body region. A gate extends over a surface portion of the body region and overlaps each of the source region and the body region such that the surface portion of the body region forms a channel region of the transistor. A drain region of the second conductivity type is formed in the drift region. The drain region is laterally spaced from the source region a first predetermined distance. A first buried layer of the first conductivity type extends into the substrate and the drift region. The first buried layer laterally extends between the source and drain regions.