| 摘要 |
To improve the radiation property without inhibiting miniaturization of the device, heat generated at a heat generating layer ( 5 ) is radiated to a substrate ( 1 ) via plugs ( 7, 17 ), wiring layers ( 8, 18 ), and plugs ( 9, 19 ). A cross sectional along the principal plane of the substrate ( 1 ) of the plugs ( 7, 9, 17, 19 ) is set to be a rectangle, and the long sides of the rectangle are parallel to the direction perpendicular to the direction connecting one end and the other end of the heat generating layer ( 5 ). Between the plugs ( 9, 19 ) and the semiconductor layer ( 2 ) is interposed n-type semiconductor layers ( 3, 13 ).
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