| 摘要 |
PROBLEM TO BE SOLVED: To decrease line edge roughness of a pattern by subjecting a resist pattern after alkali development to weak silylation treatment and to C-F etching in a single-layer resist process for forming a line by exposure to electron beams or light. SOLUTION: A resist 12 is applied on an undercoat film 11 and exposed to electron beams or light to form a pattern 12a, which is subjected to weak silylation treatment for intensive silylation of the line edge roughness part which is a side wall portion of the pattern. Then the pattern is subjected to C-F gas etching to remove the silylated layer by etching. Thus, the line edge roughness portion of the pattern is removed to obtain a preferable profile. COPYRIGHT: (C)2005,JPO&NCIPI
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