| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor wafer processing method capable of subjecting a semiconductor wafer where a very rugged circuit pattern and bumps are formed on its surface to thinning work, without causing damages or warpage to the wafer. SOLUTION: The semiconductor wafer processing method is a method of subjecting the semiconductor wafer, where the circuit pattern having a rugged surface whose level difference is as high as 0.1 to 350μm and/or bumps are formed on its surface to thinning work. The semiconductor wafer is secured to a support through the intermediary of an adhesive sheet and is then subjected to a thinning process. The adhesive sheet has an adhesive surface pasted on the semiconductor wafer, and it is preferable that the adhesive surface of the adhesive sheet pasted on the semiconductor wafer be reduced in adhesive force with respect to the semiconductor wafer, after a process of thinning the semiconductor wafer is finished. An adhesive layer, serving as the adhesive surface of the adhesive sheet, may be formed through the intermediary of an intermediate layer. COPYRIGHT: (C)2005,JPO&NCIPI |
