发明名称 NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a flip chip mounting type nitride semiconductor light emitting element provided with an electrode which can maintain a function as the electrode, while reflecting more a light. <P>SOLUTION: In the flip chip mounting type nitride semiconductor light emitting element, a laminate containing a light emitting layer composed of a nitride semiconductor crystal is formed on an upper surface side of a crystal substrate, an ohmic electrode is formed on an upper surface of a contact layer which is an uppermost layer of the laminate, and a light is taken out from a rear surface side of the crystal substrate by flip chip mounting which is performed by reversing vertically. The ohmic electrode has a portion formed on the upper surface of the contact layer by a fragmentation pattern, and on the upper surface of the contact layer exposed to between the fragmentated ohmic electrodes, a reflection layer which can reflect a light emitted from the light emitting layer is formed. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005116794(A) 申请公布日期 2005.04.28
申请号 JP20030349445 申请日期 2003.10.08
申请人 MITSUBISHI CABLE IND LTD 发明人 OUCHI YOICHIRO;OKAGAWA HIROAKI;TADATOMO KAZUYUKI
分类号 H01L21/28;H01L33/32;H01L33/38;H01L33/40;H01L33/62 主分类号 H01L21/28
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