| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a capacitor in a semiconductor device provided with a capacitor having a pair of conductive layers facing each other without increasing the number of manufacturing processes. <P>SOLUTION: A semiconductor assembly 2 has rewired wiring 14, a lower conductive layer 18, first connecting wiring (not shown in the figure), and second connecting wiring 16. All are simultaneously formed on a protective film 9. The lower conductive layer 18 is connected to one of connection pads for capacitor provided on a semiconductor substrate 4 through the first connecting wiring. On the top surface of an upper insulating film 24 provided on the semiconductor assembly 2; upper rewired wiring 27, an upper conductive layer 32, and third connecting wiring 28 are simultaneously formed. In addition, the upper conductive layer 32 is connected to the other connection pad 6 for capacitor provided on the semiconductor substrate 4 through the third connecting wiring 28, a columnar electrode 21 provided on the top surface of the connection pad of the second connecting wiring 16, and the second connecting wiring 16. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
