| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can solve the problem that, in the conventional semiconductor device, the looped forms of thin metallic wires connecting electrode pads and leads to each other cannot be made lower in height and, accordingly, a package becomes thicker in thickness. <P>SOLUTION: In this semiconductor device, the thin metallic wires 11 are partially brought into contact with a silicon nitride film 3 formed on the surface of a semiconductor chip 1. In addition, the thin metallic wires 11 are separated upward from the outer peripheral end 21 of the chip 1. Consequently, the thin metallic wires 11 are brought into contact with the side face 22 of the chip 1, and the occurrence of short circuits can be prevented. Moreover, since the looped forms of the metallic wires 11 can be made lower in height from the surface of the chip 1, the thickness of the package can be reduced. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
