ELECTRON BEAM LITHOGRAPHY DEVICE AND METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a lithography technology capable of high accuracy matching lithography in an electron beam lithography device for performing mark detection by light or the like. SOLUTION: The electron beam lithography device comprises an electron source 101; an electron optics system for forming a desired pattern on a sample by irradiating and scanning the sample 124 thereon with an electron beam emitted from the electron source 101; a stage 125 for mounting the sample 124; a mask substrate 126 provided on the stage 125; means 128, 129 provided on the same side as an irradiation direction of the electron beam for radiating a position detection optical beam for irradiating the mark substrate 126; optical detection means 123 provided on the same side as the means for radiating the optical beam for receiving reflected light reflected on the mark substrate; and electron detection means 127 provided on the opposite side to the optical detection means, with respect to the optical detection means for receiving transmission electrons obtained by the irradiation of the electron beam to the mark substrate. Relative position information between the optical beam and the electron beam is found on the basis of signals of the detected reflected light and the transmission electrons. COPYRIGHT: (C)2005,JPO&NCIPI