| 摘要 |
A first semiconductor element is a transistor for use in a memory cell region, and a second semiconductor element is a transistor for use in a peripheral circuit region. A first total impurity concentration of a first impurity diffusion region and a second impurity diffusion region of the first semiconductor element is higher than a second total impurity concentration of a fifth impurity diffusion region of the second semiconductor element. Thus, a semiconductor device with semiconductor elements having different threshold voltages is obtained. |
