发明名称 |
Diode for use in MRAM devices and method of manufacture |
摘要 |
A data storage device is disclosed that has a plurality of word lines, a plurality of bit lines, and a resistive crosspoint array of memory cells. Each memory cell is connected to a bit line and connected to an isolation diode that further connects to a respective word line. The isolation diode provides a unidirectional conductive path from the bit line to the word line. Each word line provides a common metal-semiconductor contact with each diode sharing the word line such that each diode has a separate metal contact located between the semiconductor portion of the common metal-semiconductor contact and its respective memory cell.
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申请公布号 |
US6885573(B2) |
申请公布日期 |
2005.04.26 |
申请号 |
US20020098206 |
申请日期 |
2002.03.15 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
SHARMA MANISH;TRAN LUNG T. |
分类号 |
G11C11/00;G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C17/06 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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