摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which can solve the problem caused by the conventional semiconductor integrated circuit device wherein free carriers (electrons) are generated from the drive element of a motor due to a counter electromotive force from the motor, and cause the malfunctions of a control element which controls the drive element. SOLUTION: In this semiconductor integrated circuit device 1, n-type embedded diffusion regions 29 are formed between a substrate 4 and an epitaxial layer 5 in island regions 8 and 9 constituting a small signal section 2. Therefore, in the island regions 8 and 9 constituting the small signal 2, the substrate 4 and the first epitaxial layer 5 are substantially demarcated by the n-type embedded diffusion regions 29 on which a power-supply potential is applied. Consequently, the malfunction of the small signal 2 can be prevented by preventing the free carriers (electrons), generated from an npn power transistor 3 due to the counter electromotive force of the motor from flowing into the signal 2. COPYRIGHT: (C)2005,JPO&NCIPI
|