发明名称 |
Tunnel-junction structure incorporating N-type layer comprising nitrogen and a group VI dopant |
摘要 |
A tunnel junction structure comprises an n-type tunnel junction layer of a first semiconductor material, a p-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. The first semiconductor material includes gallium (Ga), nitrogen (N), arsenic (As) and is doped with a Group VI dopant. The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer. Doping the first semiconductor material n-type with a Group VI dopant maximizes the doping concentration in the first semiconductor material, thus further improving the probability of tunneling.
|
申请公布号 |
US2005083979(A1) |
申请公布日期 |
2005.04.21 |
申请号 |
US20030688600 |
申请日期 |
2003.10.17 |
申请人 |
LEARY MICHAEL H.;MARS DANNY E.;ROH SUNGWON D.;CHAMBERLIN DANIELLE R.;CHANG YING-LAN |
发明人 |
LEARY MICHAEL H.;MARS DANNY E.;ROH SUNGWON D.;CHAMBERLIN DANIELLE R.;CHANG YING-LAN |
分类号 |
H01S5/00;H01S5/024;H01S5/042;H01S5/183;H01S5/22;H01S5/30;H01S5/343;(IPC1-7):H01S5/00 |
主分类号 |
H01S5/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|