发明名称 |
Fully dry, Si recess free process for removing high k dielectric layer |
摘要 |
A fully dry etch method is described for removing a high k dielectric layer from a substrate without damaging the substrate and has a high selectivity with respect to a gate layer. The etch is comprised of BCl<SUB>3</SUB>, a fluorocarbon, and an inert gas. A low RF bias power is preferred. The method can also be used to remove an interfacial layer between the substrate and the high k dielectric layer. A HfO<SUB>2 </SUB>etch rate of 55 Angstroms per minute is achieved without causing a recess in a silicon substrate and with an etch selectivity to polysilicon of greater than 10:1. Better STI oxide divot control is also provided by this method. The etch through the high k dielectric layer may be performed in the same etch chamber as the etch process to form a gate electrode.
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申请公布号 |
US2005081781(A1) |
申请公布日期 |
2005.04.21 |
申请号 |
US20030688045 |
申请日期 |
2003.10.17 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO. |
发明人 |
LIN HUAN-JUST;TSAI MING-HUAN;LIN LI-TE S.;CHIU YUAN-HUNG;TAO HAN-JAN |
分类号 |
C30B23/00;C30B25/00;C30B28/12;C30B28/14;H01L21/28;H01L21/311;H01L21/316;H01L29/49;H01L29/51;(IPC1-7):C30B23/00 |
主分类号 |
C30B23/00 |
代理机构 |
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