| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a superior polycrystalline thin-film semiconductor device under a comparatively lower temperature. SOLUTION: The method for manufacturing the semiconductor device uses a semiconductor film formed on a substrate, as an active layer. The method includes a step of depositing an amorphous semiconductor film using material gas containing a higher-order silane, by a low-pressure chemical vapor deposition method, in a state of which deposition temperature is lower than 430°C, and the deposition rate is 0.5 nm/min or higher, a step of forming a crystalline semiconductor film by crystallizing the amorphous semiconductor film in solid state, and a step of melting a portion of the crystalline semiconductor film. COPYRIGHT: (C)2005,JPO&NCIPI
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