Cellular mosfet devices and their manufacture

摘要

A cellular MOSFET device has a cellular area (CA) comprising active MOSFET cells, and one or more Schottky diode areas (SA) accommodated within a deep end region ( 15 ) at a lateral boundary of this cellular area (CA). This deep end region ( 150 ) is laterally divided so as to accommodate the diode area (SA) therein. A diode portion ( 14 d) of the first conductivity type of the drain region ( 14 ) extends upwardly through the laterally-divided deep end region ( 150 ) that is of the second conductivity type. The Schotty barrier ( 100 ) formed with this diode portion ( 14 d) terminates laterally in the laterally-divided portions ( 150 f) of the deep end region ( 150 ) which serve as a guard region and field-relief region for the Schottky diode.