| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern, relating to a method for manufacturing a semiconductor device, by which a resist pattern having an aperture diameter smaller than the resolution limit of a photoresist and having a reverse tapered end profile of the aperture can be formed by simple techniques. SOLUTION: A photoresist film 12 is formed on a substrate 10, and an aperture is formed in the resist film 12 in such a manner that the aperture reaches the substrate 10 and that its side wall in the higher position shows the higher hydrophilicity and affinity with a chemical liquid 16 which swells the photoresist film, so as to form the photoresist film 12 having the aperture reaching the substrate 10. A chemical liquid 16 is applied on the photoresist film 12 having the aperture to swell the photoresist film 16, and thereby, to render the side wall part of the aperture into a reverse tapered profile. COPYRIGHT: (C)2005,JPO&NCIPI |
