| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit having a device higher in a cutoff frequency fu with respect to noise. SOLUTION: The semiconductor integrated circuit includes a plurality of second conductivity-type deep well layers 9 that are provided on a first conductivity-type semiconductor substrate 8 and are isolated from each other, first conductivity-type back gate well layers 10 each one of which is provided at the second conductivity-type deep well layers 9, second conductivity-type MIS transistor devices 3 each one of which is provided at the first conductivity-type back gate well layers 10 with the first conductivity-type back gate well layers 10 as backgates and are connected in parallel, and second conductivity-type isolated well layers 4 that are provided at the first conductivity-type back gate well layers 10, surround the second conductivity-type MIS transistor devices 3 and reach the second conductivity-type deep well layers 9. COPYRIGHT: (C)2005,JPO&NCIPI
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