| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for controlling etchant gas concentration in an etching chamber. SOLUTION: The etchant gas concentration and inert gas concentration are determined and the latter concentration is used to normalize the etchant gas concentration. The normalized value is compared with a predetermined response value, and depending on the comparison result, the flow of etchant gas into the chamber is controlled. COPYRIGHT: (C)2005,JPO&NCIPI |
