| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide the manufacturing method of a light emitting diode capable of increasing efficiency in manufacture. <P>SOLUTION: An epitaxial wafer 101 and a p-GaP substrate 7 are introduced into a heat-treatment furnace 120 while the epitaxial wafer 101 is in contact with the p-GaP substrate 7. After that, phosphine and arsine are supplied into the heat-treatment furnace 120 and a heat treatment mechanism 122 is actuated for performing heat treatment at about 800°C for about one hour. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
