发明名称 |
Method and system for reducing wafer edge tungsten residue utilizing a spin etch |
摘要 |
A method and system for reducing wafer edge residue following a chemical mechanical polishing operation. A semiconductor wafer can be polished utilizing a chemical mechanical polishing apparatus. Thereafter, an acid etch operation may be performed to remove a residue, such as tungsten (W), collected on the semiconductor wafer as a result of the chemical mechanical polishing operation. A spin etch operation removes residue from the edges of the semiconductor wafer following chemical mechanical polishing of the semiconductor wafer.
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申请公布号 |
US6881675(B2) |
申请公布日期 |
2005.04.19 |
申请号 |
US20020146864 |
申请日期 |
2002.05.15 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO, LTD. |
发明人 |
PAN JENG-YANG;HUANG CHIN-TE;HUANG CHEN-YI;CHEN SHENG-WEN |
分类号 |
H01L21/02;H01L21/302;H01L21/469;(IPC1-7):H01L21/469 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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