| 摘要 |
Preparation methods and stabilization processes for low k polymers that consist of sp<SUP>2</SUP>C-X and HC-sp<SUP>3</SUP>C<SUB>alpha</SUB>-X bonds. A preparation method is achieved by controlling the substrate temperature and feed rate of the polymer precursors. One stabilization process includes a post annealing of as-deposited polymer films under the presence of hydrogen under high temperatures. The reductive annealing of these films is conducted at temperatures from -20° C. to -50° C. to +20° C. to +50° C. of their Reversible Crystal Transformation ("CRT") temperatures, then quenching the resulting films to -20° C. to -50° C. below their "CRT" temperatures. The reductive annealing is conducted before the as-deposited film was removed from a deposition system and still under the vacuum. "Re-stabilization" processes of polymer surfaces that are exposed to reactive plasma etching are also disclosed; thus, further coating by barrier metal, cap layer or etch-stop layer can be safely applied.
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