| 摘要 |
An information recording medium ensures high reliability and favorable overwrite cycle-ability even when an interface layer is not provided between a recording layer and a dielectric layer. The recording layer and the dielectric layers are formed on the surface of the substrate. In the recording layer, a phase change is generated between a crystal phase and an amorphous phase by irradiation of light or application of electric energy. The dielectric layers are oxide-fluoride-based material layers containing one or more oxides which each are an oxide of at least one element selected from a first group including only Ti, Zr, Cr, Hf, Nb, Ta, Cr and Si and one or more fluorides which each are a fluoride of at least one element selected from a second group including only La, Ce, Pr, Nd, Gd, Dy, Ho, Er and Yb.
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