发明名称 IN-SITU DETECTION OF BORDER OF METAL THIN FILM STATE USING OPTICAL INTERFERENCE THROUGH DYNAMIC UPDATE REFERENCE
摘要 <P>PROBLEM TO BE SOLVED: To find a terminal point during chemical mechanical polishing (CMP) treatment. <P>SOLUTION: A reflection spectrum data sample is received corresponding to a plurality of spectra of a light reflected from the irradiation part of a wafer surface. The reflection spectrum data sample is normalized by using normalization reference comprising a first reflection spectrum data sample obtained before the CMP treatment stage. Further, the normalization reference is updated during treatment by using second reflection spectrum data sample obtained in a stage before the CMP treatment. The second reflection spectrum data sample is obtained after the first reflection spectrum data sample. The terminal point is decided based on optical interference which happens to reflection spectrum data. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005101114(A) 申请公布日期 2005.04.14
申请号 JP20030330684 申请日期 2003.09.22
申请人 LAM RES CORP 发明人 SUNDER AMAACHUA
分类号 B24B49/12;B24B37/013;H01L21/304 主分类号 B24B49/12
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