Method of fabricating a metal oxide semiconductor field effect transistor and a metal oxide semiconductor field effect transistor

摘要

A method of fabricating a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is provided which comprises the steps of forming upon a semiconductor substrate (10) a field effect transistor structure comprising a gate oxide (12), a gate electrode (14) formed upon said gate oxide (12), a drain region (16) and a source region (18) which are formed within the semiconductor substrate (10) adjacent to the gate electrode (14), and depositing a fluorine in-situ doped insulating layer (28) covering the field effect transistor structure. The fluorine in-situ doped insulating layer (28) is provided for improving the transistor reliability.